A review of the application of thin film transistor in ph sensors
DOI: 203 Downloads 5410 Views
Author(s)
Abstract
This paper has reviewed the recent research progress on the application of thin-film transistors in pH sensors, specifically on aspects related to the structures and materials, including active channels and the top gate dielectrics. Results indicate that the pH sensitivity can be promoted by the utilization of specific structures. Moreover, employing proper top gate dielectrics and active channels can promote the capacitance ratio of the top-gate dielectric to the bottom-gate dielectric, such as the a-IGZO as the active channel and Ta2O5 as the top gate dielectric
Keywords
ph sensors, thin film transistor, structure, material
Cite this paper
Lei Qiang, Songyan Li,
A review of the application of thin film transistor in ph sensors
, SCIREA Journal of Physics.
Volume 5, Issue 5, October 2020 | PP. 91-99.
References
[ 1 ] | Kang J W and Cho W J 2019 Solid-State Electronics 152 29 |
[ 2 ] | Jang H J and Cho W J 2014 Sci Rep. 4 5284 |
[ 3 ] | Bergveld P 1970 IEEE transactions on bio-medical engineering 17 70 |
[ 4 ] | Jang H J and Cho W J 2012 Applied Physics Letters 100 70 |
[ 5 ] | Spijkman M J, Brondijk J J, Geuns T C T, Smits E C P and Leeuw D M D 2010 Advanced Functional Materials 20 898 |
[ 6 ] | Lee C T, Chiu Y S and Wang X Q 2013 Sensors & Actuators B Chemical 181 810 |
[ 7 ] | Liu H Y, Hsu W C, Chen W F, Lin C W, Li Y Y, Lee C S, Sun W C, Wei S Y and Yu S M 2016 IEEE Sensors Journal 16 3514 |
[ 8 ] | Yan D, Son D H, Quan D, Lee J H, Won C H, Kim J G, Kang S H, Lee J H, Chen D and Hai L 2017 Sensors & Actuators B Chemical 260 134 |
[ 9 ] | Cai G, Qiang L, Peng Y, Chen Z, Yi Z, Li Y, Pei Y and Gang W 2018 IEEE Electron Device Letters 39 1409 |
[ 10 ] | Kumar N, Kumar J and Panda S 2016 IEEE Electron Device Letters 37 500 |
[ 11 ] | Kumar N, Kumar J and Panda S 2016 Rsc Advances 6 10810 |
[ 12 ] | Ning L, Liu Y, Zhu L, Yi S and Wan Q 2014 IEEE Electron Device Letters 35 482 |
[ 13 ] | Spijkman M, Smits E C P, Cillessen J F M, Biscarini F, Blom P W M and Leeuw D M D 2011 Applied Physics Letters 98 70 |
[ 14 ] | Pavlidis S, Getz P, Hagen J, Kelley-Loughnane N, Bayraktaroglu B and Brand O 2015 Proc. Transducers 1334 |
[ 15 ] | Kumar N, Sutradhar M, Kumar J and Panda S 2016 Semiconductor Science Technology 32 035013 |
[ 16 ] | Lu C H, Hou T H and Pan T M 2018 IEEE Transactions on Electron Devices 65 237 |
[ 17 ] | Jang H J, Gu J G and Cho W J 2013 Sensors & Actuators B Chemical 181 880 |
[ 18 ] | Pyo J Y and Cho W J 2017 Semiconductor Science Technology 32 035015 |
[ 19 ] | Boesen G F and Jacobs J E 1968 Proceedings of the IEEE 56 2094 |
[ 20 ] | Park J S, Maeng W J, Kim H S and Park J S 2012 Thin Solid Films 520 1679 |
[ 21 ] | Nomura K, Ohta H, Takagi A, Kamiya T, Hirano M and Hosono H 2004 Nature 432 488 |
[ 22 ] | Qi W J, Lee B H, Nieh R, Kang L G, Jeon Y J, Onishi K andLee J C 2004 Materials Today 7 24 |
[ 23 ] | Päiväsaari J, Putkonen M and Niinistö L 2005 Thin Solid Films 472 275 |
[ 24 ] | Engström O, Raeissi B, Hall S, Buiu O, Lemme M C, Gottlob H D B, Hurley P K and Cherkaoui K 2007 Solid State Electronics 51 622 |
[ 25 ] | Izu N, Itoh T, Shin W, Matsubara I and Murayama N 2007 Electrochemical and Solid-State Letters 123 407 |
[ 26 ] | Vaidya S, Ahmad T, Agarwal S and Ganguli A K 2010 Journal of the American Ceramic Society 90 863 |
[ 27 ] | Dover R B V 1999 Applied Physics Letters 74 3041 |
[ 28 ] | Schroeder T, Lupina G, Dabrowski J, Mane A, Wenger C, Lippert G and Müssig H J 2005 Applied Physics Letters 87 1229 |
[ 29 ] | Yi Z, Kita K, Kyuno K and Toriumi A 2006 Applied Physics Letters 89 1607 |
[ 30 ] | Takechi K, Iwamatsu S, Yahagi T, Abe Y, Kobayashi S .and Tanabe H 2014 Japanese Journal of Applied Physics 53 076702 |
[ 31 ] | Kumar N, Tiwari A P, Kumar J and Panda S 2015 International Symposium on Physics & Technology of Sensors IEEE 214 |
[ 32 ] | Wilk G D, Wallace R M and Anthony J M 2001 Journal of Applied Physics 89 5243 |