Accurate expressions for optical coefficients, given in n(p)-type heavily (lightly) doped InAs-crystals at any temperature T, due to the impurity-size effect, and obtained from an improved Forouhi-Bloomer parameterization model (FB-PM)

H. Van Cong, Université de Perpignan Via Domitia, Laboratoire de Mathématiques et Physique (LAMPS), EA 4217, Département de Physique, 52, Avenue Paul Alduy, F-66 860 Perpignan, France.

Abstract
As given in Eq. (2) and Table 1, our analytical expression for the static dielectric constant, \varepsilon\left(r_{d\left(a\right)}\right), given in the n(p)-type InAs crystal, expressed as a function of the donor (acceptor) radius, r_{d\left(a\right)}, and determined from an effective Bohr model, decreases with increasing r_{d\left(a\right)}. It strongly affects the critical d(a)-density in the metal-insulator transition (MIT) at the temperature T (=0K), N_{CDn(CDp)}(r_{d(a)}), determined in Eq. (3), and all the expressions for optical coefficients, determined in Equations (24, 25, 28, 29) for the n(p)-type heavily (lightly) doped InAs semiconductors at any T. In particular, in the P-InAs system at T=0K, Table 3c shows that our obtained results for those optical coefficients are found to be more accurate than the corresponding ones, obtained from the FB-PM [11], suggesting that the present model, used here to study the optical properties of the n(p)-type heavily (lightly) doped InSb -crystal at any T, could be a good improved FB-PM.

Keywords
Effects of the impurity-size and heavy doping; effective autocorrelation function for potential fluctuations; optical coefficients; critical photon energy

Cite this paper
H. Van Cong, Accurate expressions for optical coefficients, given in n(p)-type heavily (lightly) doped InAs-crystals at any temperature T, due to the impurity-size effect, and obtained from an improved Forouhi-Bloomer parameterization model (FB-PM) , SCIREA Journal of Physics. Volume 8, Issue 4, August 2023 | PP. 306-331. 10.54647/physics140561

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